NEGATIVE PHOTOCONDUCTIVITY OF GOLD-DOPED SILICON

被引:0
|
作者
BYKOVSKII, YA
VINOGRAD.KN
ZUEV, VV
KOZYREV, YP
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 3卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:933 / +
页数:1
相关论文
共 50 条
  • [1] NEGATIVE PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON
    BARRETT, JR
    GERHARD, GC
    [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 900 - &
  • [2] PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON
    NEWMAN, R
    [J]. PHYSICAL REVIEW, 1954, 94 (06): : 1530 - 1531
  • [3] PHOTOCONDUCTIVITY OF GOLD-DOPED N-TYPE SILICON
    BADALOV, AZ
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1435 - &
  • [4] NEGATIVE PHOTOCONDUCTIVITY OF GOLD-DOPED GERMANIUM IN STRONG ELECTRIC FIELDS
    KARIMOVA, IZ
    SONDAEVS.VP
    STAFEEV, VI
    [J]. SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (01): : 230 - +
  • [5] HOPPING PHOTOCONDUCTIVITY OF GOLD-DOPED GERMANIUM
    BEGLOV, BI
    KHARIONO.YS
    YUDIN, SG
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (02): : 242 - &
  • [6] CHARACTERISTIC FEATURES OF THE TEMPERATURE-DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GOLD-DOPED SILICON
    ZAKIROV, AS
    IGAMBERDYEV, KT
    MAMADALIMOV, AT
    KHABIBULLAEV, PK
    [J]. SEMICONDUCTORS, 1993, 27 (09) : 860 - 862
  • [7] TRANSIENT NEGATIVE PHOTOCONDUCTIVITY IN SILICON DOPED WITH GOLD
    KUROSU, T
    YASUDA, H
    AKIBA, Y
    IIDA, M
    CHOE, IY
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03): : 205 - 208
  • [8] PROPERTIES OF GOLD-DOPED SILICON
    COLLINS, CB
    CARLSON, RO
    GALLAGHER, CJ
    [J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173
  • [9] A SIMULATION OF TRANSIENT NEGATIVE PHOTOCONDUCTIVITY IN SILICON DOPED WITH GOLD
    KIMURA, H
    KUROSU, T
    AKIBA, Y
    IIDA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (02): : 741 - 746