PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON

被引：9

作者：

NEWMAN, R

机构：

来源：

PHYSICAL REVIEW | 1954年 / 94卷 / 06期

关键词：

D O I：

10.1103/PhysRev.94.1530

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1530 / 1531

页数：2

共 50 条

[1] NEGATIVE PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON
BARRETT, JR
GERHARD, GC
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 900 - &
[2] NEGATIVE PHOTOCONDUCTIVITY OF GOLD-DOPED SILICON
BYKOVSKII, YA
VINOGRAD.KN
ZUEV, VV
KOZYREV, YP
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 933 - +
[3] PHOTOCONDUCTIVITY OF GOLD-DOPED N-TYPE SILICON
BADALOV, AZ
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1435 - &
[4] HOPPING PHOTOCONDUCTIVITY OF GOLD-DOPED GERMANIUM
BEGLOV, BI
KHARIONO.YS
YUDIN, SG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (02): : 242 - &
[5] CHARACTERISTIC FEATURES OF THE TEMPERATURE-DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GOLD-DOPED SILICON
ZAKIROV, AS
IGAMBERDYEV, KT
MAMADALIMOV, AT
KHABIBULLAEV, PK
[J]. SEMICONDUCTORS, 1993, 27 (09) : 860 - 862
[6] PROPERTIES OF GOLD-DOPED SILICON
COLLINS, CB
CARLSON, RO
GALLAGHER, CJ
[J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173
[7] THERMODYNAMIC PROPERTIES OF GOLD-DOPED SILICON
VAKHABOV, DA
ZAKHIROV, AS
IGAMBERDYEV, KT
MAMADALIMOV, AT
TURSUNOV, SO
YULDASHEV, KS
KHABIBULLAEV, PK
[J]. FIZIKA TVERDOGO TELA, 1988, 30 (07): : 1979 - 1983
[8] ELECTRICAL PROPERTIES OF GOLD-DOPED SILICON
BRUCKNER, B
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 4 (03): : 685 - &
[9] DOUBLE INJECTION IN GOLD-DOPED SILICON
VARLAMOV, IV
SONDAEVS.IA
SONDAEVS.VP
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (03): : 375 - &
[10] CAPACITANCE OF JUNCTIONS ON GOLD-DOPED SILICON
SENECHAL, RR
BASINSKI, J
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 3723 - +

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