Study of the alpha irradiation and thermal annealing of gold-doped n-type silicon

被引：0
|
作者：
机构：
来源：
J Appl Phys | / 11卷 / 5572期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] STUDY OF THE ALPHA-IRRADIATION AND THERMAL ANNEALING OF GOLD-DOPED N-TYPE SILICON
    ALI, A
    IQBAL, MZ
    BABER, N
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (11) : 5572 - 5579
  • [2] PHOTOCONDUCTIVITY OF GOLD-DOPED N-TYPE SILICON
    BADALOV, AZ
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1435 - &
  • [3] NOISE PROPERTIES OF N-TYPE GOLD-DOPED SILICON
    COLLIGAN, MB
    VANVLIET, KM
    PHYSICAL REVIEW, 1968, 171 (03): : 881 - &
  • [4] ELECTRICAL AND OPTICAL-PROPERTIES OF GOLD-DOPED N-TYPE SILICON
    WEMAN, H
    HENRY, A
    BEGUM, T
    MONEMAR, B
    AWADELKARIM, OO
    LINDSTROM, JL
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 137 - 145
  • [5] CARRIER LIFETIMES IN N-TYPE GOLD-DOPED GERMANIUM
    WILLIAMS, RL
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 : 261 - 267
  • [6] EFFECTS OF ANNEALING AND ALPHA-IRRADIATION ON DEEP LEVELS IN SILVER-DOPED N-TYPE SILICON
    ALI, A
    IQBAL, MZ
    BABER, N
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3315 - 3322
  • [7] ELECTRON-IRRADIATION AND ANNEALING OF GOLD-DOPED P-TYPE GERMANIUM
    BOYARKINA, NI
    SMIRNOV, LS
    STAS, VF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 249 - 250
  • [8] SOME PROPERTIES OF ELECTRICAL DOMAINS IN GOLD-DOPED N-TYPE GERMANIUM
    VRANA, M
    KISELEVA, OA
    KUROVA, IA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (06): : 747 - &
  • [9] THERMAL GENERATION OF CARRIERS IN GOLD-DOPED SILICON
    RICHOU, F
    PELOUS, G
    LECROSNIER, D
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6252 - 6257
  • [10] Effects of annealing and α irradiation on deep levels in silver-doped n-type silicon
    Ali, Akbar
    Zafar Iqbal, M.
    Baber, N.
    Journal of Applied Physics, 1995, 77 (07):
12345