共 50 条
- [1] SOME PROPERTIES OF ELECTRICAL DOMAINS IN N-TYPE GERMANIUM DOPED WITH COPPERSOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (01): : 88 - +KALASHNIKOV, SGKAGAN, MSVDOVENKO.VA
- [2] CARRIER LIFETIMES IN N-TYPE GOLD-DOPED GERMANIUMJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 : 261 - 267WILLIAMS, RL
- [3] ELECTRICAL AND OPTICAL-PROPERTIES OF GOLD-DOPED N-TYPE SILICONJOURNAL OF APPLIED PHYSICS, 1989, 65 (01) : 137 - 145WEMAN, HHENRY, ABEGUM, TMONEMAR, BAWADELKARIM, OOLINDSTROM, JL
- [4] SOME INVESTIGATIONS OF CURRENT-VOLTAGE CHARACTERISTICS OF GOLD-DOPED N-TYPE GERMANIUMSOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1530 - +KUROVA, IAVRANA, MBERNDT, P
- [5] NOISE PROPERTIES OF N-TYPE GOLD-DOPED SILICONPHYSICAL REVIEW, 1968, 171 (03): : 881 - &COLLIGAN, MBVANVLIET, KM
- [6] INFLUENCE OF EXTERNAL PERTURBATIONS ON BEHAVIOUR OF STATIONARY ELECTRICAL DOMAINS IN GOLD-DOPED N-TYPE GEPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (01): : 269 - &KUROVA, IAVRANA, M
- [7] INVESTIGATION OF SOME PROPERTIES OF GOLD-DOPED GERMANIUMSOVIET PHYSICS-SOLID STATE, 1964, 5 (11): : 2267 - 2274STAFEEV, VI
- [8] SOME PROPERTIES OF GOLD-DOPED GERMANIUM DIODESSOVIET PHYSICS-TECHNICAL PHYSICS, 1956, 1 (10): : 2071 - 2080LEBEDEV, AASTAFEEV, VITUCHKEVICH, VM
- [9] EFFECT OF TEMPERATURE ON THE KINETICS OF IMPURITY PHOTOCONDUCTIVITY IN N-TYPE GOLD-DOPED GERMANIUMSOVIET PHYSICS-SOLID STATE, 1963, 5 (02): : 397 - 401ZHDANOVA, NGALEKSEEVA, VG
- [10] PHOTOCONDUCTIVITY OF GOLD-DOPED N-TYPE SILICONSOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (11): : 1435 - &BADALOV, AZ