THERMAL GENERATION OF CARRIERS IN GOLD-DOPED SILICON

被引：10

作者：

RICHOU, F

PELOUS, G

LECROSNIER, D

机构：

来源：

关键词：

D O I：

10.1063/1.327611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6252 / 6257

页数：6

共 50 条

[1] GOLD-DOPED SILICON - CONDUCTIVITY AND LIFETIME OF EXCESS CARRIERS
VAPAILLE, A
ANNALES DE PHYSIQUE, 1968, 3 (01) : 13 - &
[2] PROPERTIES OF GOLD-DOPED SILICON
COLLINS, CB
CARLSON, RO
GALLAGHER, CJ
PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173
[3] PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON
NEWMAN, R
PHYSICAL REVIEW, 1954, 94 (06): : 1530 - 1531
[4] EFFECT OF STRESS ON CARRIER GENERATION RATE IN GOLD-DOPED SILICON
PRINCE, JL
WORTMAN, JJ
MONTEITH, LK
HAUSER, JR
SOLID-STATE ELECTRONICS, 1970, 13 (12) : 1519 - +
[5] RECOMBINATION AND TRAPPING PROCESSES OF INJECTED CARRIERS IN GOLD-DOPED SILICON AT LOW TEMPERATURES
AGRAZGUE.J
LI, SS
PHYSICAL REVIEW B, 1970, 2 (12): : 4966 - &
[6] NEGATIVE PHOTOCONDUCTIVITY IN GOLD-DOPED SILICON
BARRETT, JR
GERHARD, GC
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) : 900 - &
[7] ELECTRICAL PROPERTIES OF GOLD-DOPED SILICON
BRUCKNER, B
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 4 (03): : 685 - &
[8] THERMODYNAMIC PROPERTIES OF GOLD-DOPED SILICON
VAKHABOV, DA
ZAKHIROV, AS
IGAMBERDYEV, KT
MAMADALIMOV, AT
TURSUNOV, SO
YULDASHEV, KS
KHABIBULLAEV, PK
FIZIKA TVERDOGO TELA, 1988, 30 (07): : 1979 - 1983
[9] DOUBLE INJECTION IN GOLD-DOPED SILICON
VARLAMOV, IV
SONDAEVS.IA
SONDAEVS.VP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (03): : 375 - &
[10] NEGATIVE PHOTOCONDUCTIVITY OF GOLD-DOPED SILICON
BYKOVSKII, YA
VINOGRAD.KN
ZUEV, VV
KOZYREV, YP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 933 - +