High capacitance isolated surrounding stacked trench cell for advanced DRAMs

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[1] Hofmann, F.
[2] Haensch, W.
[3] Geib, H.
[4] Roesner, W.
[5] Takacs, D.
[6] Risch, L.
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Hofmann, F. | 1600年 / 15期
关键词：
Data Storage; Semiconductor;
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