High capacitance isolated surrounding stacked trench cell for advanced DRAMs

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作者：
机构：
[1] Hofmann, F.
[2] Haensch, W.
[3] Geib, H.
[4] Roesner, W.
[5] Takacs, D.
[6] Risch, L.
来源：
Hofmann, F. | 1600年 / 15期
关键词：
Data Storage; Semiconductor;
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页码：1 / 4
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