共 50 条
- [31] Dynamics of formation of photoresponse in a detector structure made of gallium arsenide Semiconductors, 2008, 42 : 443 - 447
- [34] Trap influence on the performance of gallium arsenide radiation detectors SEMICONDUCTING AND INSULATING MATERIALS, 1996: PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96), 1996, : 361 - 364
- [36] STRUCTURE OF THE INTRINSIC RECOMBINATION RADIATION SPECTRUM OF GALLIUM ARSENIDE SOVIET PHYSICS-SOLID STATE, 1963, 4 (11): : 2449 - 2451
- [37] The influence of the charge trapping in gallium arsenide radiation detectors HARD X-RAY AND GAMMA-RAY DETECTOR PHYSICS AND APPLICATIONS, 1998, 3446 : 10 - 16
- [38] INFLUENCE OF IMPURITIES ON RECOMBINATION RADIATION SPECTRA OF GALLIUM ARSENIDE SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (10): : 2519 - +
- [39] Chapter 10 Gallium Arsenide Radiation Detectors and Spectrometers Semiconductors and Semimetals, 1995, 43 (0C): : 383 - 442