Gamma- radiation damage in expitaxial gallium arsenide

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作者：

BREHM GE ^{[1
]}

PEARSON GL ^{[1
]}

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[1] Stanford Electronics Laboratories, Stanford, CA 94305, United States

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| 1600年 / 43期

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[1] GAMMA-RADIATION DAMAGE IN EPITAXIAL GALLIUM-ARSENIDE
BREHM, GE
PEARSON, GL
JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) : 568 - &
[2] IMPURITY PROFILE IN EXPITAXIAL STRUCTURES OF GALLIUM-ARSENIDE
DYAKONOV, LI
LIPATOVA, NI
MASLOV, VN
RUDA, BI
INORGANIC MATERIALS, 1976, 12 (02) : 158 - 161
[3] PROBABILITY OF INTERVALLEY GAMMA-] L TRANSITIONS IN GALLIUM-ARSENIDE CRYSTALS
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MIRLIN, DN
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SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (06): : 630 - 632
[4] EXPITAXIAL LAYERS OF IRON-DOPED GALLIUM-ARSENIDE
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BAKIN, NN
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INORGANIC MATERIALS, 1982, 18 (09) : 1237 - 1240
[5] Gamma- radiation damage of organic scintillation materials
GODHAM G
WARE AR
SALVARIDIS P
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[6] RADIATION DAMAGE IN COPPER-DOPED GALLIUM ARSENIDE
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[7] RADIATION-DAMAGE OF GALLIUM-ARSENIDE BY HEAVY-IONS
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TRANSACTIONS OF THE AMERICAN NUCLEAR SOCIETY, 1971, 14 (02): : 574 - +
[8] RADIATION-DAMAGE OF GALLIUM ARSENIDE BY 50 KEV ZINC IONS
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BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (04): : 594 - &
[9] RECOMBINATION RADIATION OF GALLIUM ARSENIDE
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ROGACHEV, AA
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TSARENKOV, BV
SOVIET PHYSICS-SOLID STATE, 1962, 4 (04): : 782 - 784
[10] ON EFFECT OF NEGATIVE GEOMETRIC MAGNETORESISTANCE OF EXPITAXIAL LAYERS OF GALLIUM-ARSENIDE WITH CONDUCTING INCLUSIONS
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