user

Radiation hard microstrip detector based on gallium arsenide

被引：0
|
作者：
Inst for High Energy Physics, Protvino, Russia [1 ]
机构：
来源：
Nucl Instrum Methods Phys Res Sect A | / 3卷 / 406-408期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
5
引用
收藏
相关论文
共 50 条
  • [41] INSTABILITY OF RECOMBINATION RADIATION IN SEMIINSULATING GALLIUM-ARSENIDE
    PEKA, GP
    KARKHANIN, YI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (04): : 639 - +
  • [42] INDUCED RADIATION IN GALLIUM ARSENIDE WHEN OPTICALLY EXCITED
    BASOV, NG
    GRASYUK, AZ
    KATULIN, VA
    DOKLADY AKADEMII NAUK SSSR, 1965, 161 (06): : 1306 - &
  • [43] RADIATION DAMAGE IN COPPER-DOPED GALLIUM ARSENIDE
    PAPEIKO, AS
    RADOVSKI.EE
    STELMAKH, VF
    TKACHEV, VD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 112 - &
  • [44] RECOMBINATION RADIATION SPECTRUM OF GALLIUM ARSENIDE WITH CURRENT EXCITATION VIA P-N HETEROJUNCTIONS OF GALLIUM PHOSPHIDE-GALLIUM ARSENIDE
    ALFEROV, ZI
    GABRUZOV, DZ
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (08): : 1919 - +
  • [45] DISPERSION DATA FOR OPEN SUSPENDED MICROSTRIP ON ALUMINA AND GALLIUM-ARSENIDE SUBSTRATES
    TOMAR, RS
    BHARTIA, P
    INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 1988, 9 (01): : 1 - 14
  • [46] PHOTOSENSITIVITY SPECTRUM OF A GALLIUM-ARSENIDE CHARGE-ACCUMULATION DETECTOR
    BOBYLEV, BA
    ZALETIN, VM
    KRAVCHENKO, AF
    TORCHINOV, MZ
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (11): : 1310 - 1311
  • [47] PHOTOSENSITIVITY SPECTRUM OF A GALLIUM ARSENIDE CHARGE-ACCUMULATION DETECTOR.
    Bobylev, B.A.
    Zaletin, V.M.
    Kravchenko, A.F.
    1600, (10):
  • [48] Gallium arsenide
    Nguyen, Ryan H.
    IEEE Potentials, 1999, 17 (05): : 33 - 35
  • [49] RADIATION-INDUCED CARBON COMPLEXES IN GALLIUM-ARSENIDE
    CARLONE, C
    REJEB, C
    JORIO, A
    PARENTEAU, M
    KHANNA, SM
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 90 (1-4): : 405 - 408
  • [50] Radiation-thermal activation of silicon implanted in gallium arsenide
    Ardyshev, VM
    Surzhikov, AP
    SEMICONDUCTORS, 1999, 33 (06) : 636 - 639
12345