Reaction mechanism of mercury-sensitized photochemical vapor deposited silicon oxide

被引：0

作者：

机构：

[1] Lan, Wen-How

[2] Lin, Wen-Jen

[3] Tu, Shun-Lih

[4] Yang, Sheng-Jenn

[5] Huang, Kai-Feng

来源：

Lan, Wen-How | 1600年 / 32期

关键词：

Chemical vapor deposition - Mathematical models - Mercury vapor lamps - Nitrogen oxides - Photochemical reactions - Reaction kinetics - Silanes - Silica - Surface phenomena;

D O I：

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学科分类号：

摘要：

The deposition mechanism for silicon oxide (SiOx) films grown by the mercury-sensitized photochemical vapor deposition (photo-CVD) method using silane (SiH4) and nitrous oxide (N2O) under irradiation of a low-pressure mercury lamp has been studied. An increasing-maximum-decrease pattern of the deposition rate with increasing silane partial pressure ratio (Ps = PSiH(4)/Ptotal) has been observed. Deposition rates for the SiO-like and SiO2-like films have been analyzed based on the Langmuir-Hinshelwood surface reaction theory. Rate equations were also derived. By means of the Arrhenius plots, activation energy of the surface reaction and the heat of adsorption can be determined.

引用

共 50 条

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Japanese Journal of Applied Physics, Part 2: Letters, 1996, 35 (12 A):
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[28] Mercury-sensitized hydrogen radical photoetching of undoped hydrogenated amorphous silicon and crystalline silicon
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[29] HYDROGENATED AMORPHOUS-SILICON FILMS PREPARED BY MERCURY SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION
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[30] THE SELECTIVE DEPOSITION OF A SILICON FILM ON HYDROGENATED AMORPHOUS-SILICON BY MERCURY SENSITIZED PHOTOCHEMICAL VAPOR-DEPOSITION
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