Reaction mechanism of mercury-sensitized photochemical vapor deposited silicon oxide

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作者：
机构：
[1] Lan, Wen-How
[2] Lin, Wen-Jen
[3] Tu, Shun-Lih
[4] Yang, Sheng-Jenn
[5] Huang, Kai-Feng
来源：
Lan, Wen-How | 1600年 / 32期
关键词：
Chemical vapor deposition - Mathematical models - Mercury vapor lamps - Nitrogen oxides - Photochemical reactions - Reaction kinetics - Silanes - Silica - Surface phenomena;
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摘要：
The deposition mechanism for silicon oxide (SiOx) films grown by the mercury-sensitized photochemical vapor deposition (photo-CVD) method using silane (SiH4) and nitrous oxide (N2O) under irradiation of a low-pressure mercury lamp has been studied. An increasing-maximum-decrease pattern of the deposition rate with increasing silane partial pressure ratio (Ps = PSiH(4)/Ptotal) has been observed. Deposition rates for the SiO-like and SiO2-like films have been analyzed based on the Langmuir-Hinshelwood surface reaction theory. Rate equations were also derived. By means of the Arrhenius plots, activation energy of the surface reaction and the heat of adsorption can be determined.
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