共 32 条
- [24] THE ENHANCED DIFFUSION OF BORON IN SILICON AFTER HIGH-DOSE IMPLANTATION AND DURING RAPID THERMAL ANNEALING NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 655 - 660
- [25] Experiments and modeling of boron segregation to {311} defects and initial rapid enhanced boron diffusion induced by self-implantation in Si INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 497 - 500
- [26] Modeling of phosphorous diffusion in ion-implanted Si at dopant transient enhanced out-diffusion during vacuum rapid thermal annealing MICRO- AND NANOELECTRONICS 2003, 2004, 5401 : 669 - 676
- [27] MAGNETIC-FIELD AND SURFACE INFLUENCES ON DOUBLE INJECTION PHENOMENA IN SEMICONDUCTORS .2. THE MAGNETODIODE EFFECT THEORY FOR THE DIFFUSION REGIMES, MAGNETODIODE EXPERIMENTS AND APPLICATIONS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (01): : 281 - 292
- [28] Loss and Isotopic Fractionation of Alkali Elements during Diffusion-Limited Evaporation from Molten Silicate: Theory and Experiments ACS EARTH AND SPACE CHEMISTRY, 2021, 5 (04): : 755 - 784