共 32 条
- [12] TRANSIENT ENHANCED DIFFUSION AND ELECTRICAL ACTIVATION OF AS IN SI DURING RAPID THERMAL ANNEALING NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 516 - 520
- [13] A study on mechanisms of enhanced diffusion of boron during rapid thermal processing (RTP) PROCEEDINGS OF THE SECOND INTERNATIONAL SYMPOSIUM ON PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANUFACTURING, 1997, 97 (09): : 325 - 332
- [16] ENHANCED DIFFUSION OF IMPURITIES IN SILICON DURING RAPID THERMAL ANNEALING (COMPUTER-SIMULATION) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1991, 125 (02): : K71 - K75
- [18] THE ENHANCED DIFFUSION OF LOW-CONCENTRATION PHOSPHORUS, ARSENIC AND BORON IN SILICON DURING IR-HEATING JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08): : L1319 - L1321