New circuit model for tunneling related trapping at insulator-semiconductor interfaces in accumulation

被引：0
|
作者：
机构：
来源：
| 1600年 / Publ by American Inst of Physics, Woodbury, NY, USA卷 / 72期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] A NEW CIRCUIT MODEL FOR TUNNELING RELATED TRAPPING AT INSULATOR-SEMICONDUCTOR INTERFACES IN ACCUMULATION
    MUI, DSL
    REED, J
    BISWAS, D
    MORKOC, H
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (02) : 553 - 558
  • [2] ELECTRONIC PROPERTIES OF INSULATOR-SEMICONDUCTOR INTERFACES
    KOCH, F
    SURFACE SCIENCE, 1979, 80 (01) : 110 - 124
  • [3] Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structures
    Dmitriev, SG
    Markin, YV
    SEMICONDUCTORS, 2002, 36 (02) : 197 - 202
  • [4] Segregation of mobile ions on insulator-semiconductor interfaces in metal-insulator-semiconductor structures
    S. G. Dmitriev
    Yu. V. Markin
    Semiconductors, 2002, 36 : 197 - 202
  • [5] UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES
    HASEGAWA, H
    OHNO, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1130 - 1138
  • [6] HYSTERESIS AND FRANCK-CONDON RELAXATION IN INSULATOR-SEMICONDUCTOR TUNNELING
    FOWLER, WB
    RUDRA, JK
    ZVANUT, ME
    FEIGL, FJ
    PHYSICAL REVIEW B, 1990, 41 (12): : 8313 - 8317
  • [7] Photovoltage Reversal in Organic Optoelectronic Devices with Insulator-Semiconductor Interfaces
    Hu, Laigui
    Jin, Wei
    Feng, Rui
    Zaheer, Muhammad
    Nie, Qingmiao
    Chen, Guoping
    Qiu, Zhi-Jun
    Cong, Chunxiao
    Liu, Ran
    MATERIALS, 2018, 11 (09)
  • [8] STATISTICS FOR THE INTERPRETATION OF DEEP LEVEL TRANSIENT SPECTROSCOPY ON INSULATOR-SEMICONDUCTOR INTERFACES
    ENGSTROM, O
    SHIVARAMAN, MS
    JOURNAL OF APPLIED PHYSICS, 1985, 58 (10) : 3929 - 3930
  • [9] Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors
    Hasegawa, H., 1600, (41-42):
  • [10] ELECTRON EJECTION PROCESSES AT INSULATOR-SEMICONDUCTOR INTERFACES IN ACTFEL DISPLAY DEVICES
    BHASKARAN, S
    SINGH, VP
    MORTON, DC
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (10) : 1756 - 1762
12345