New circuit model for tunneling related trapping at insulator-semiconductor interfaces in accumulation

被引：0

作者：

机构：

来源：

| 1600年 / Publ by American Inst of Physics, Woodbury, NY, USA卷 / 72期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[31] New evidence on the relation between tunnelling and trap density at insulator/semiconductor interfaces
Konofaos, N
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (08) : 733 - 738
[32] Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology
Hasegawa, H
Kodama, S
Ikeya, K
Fujikura, H
APPLIED SURFACE SCIENCE, 1997, 117 : 710 - 713
[33] Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology
Hasegawa, Hideki
Kodama, Satoshi
Ikeya, Kengo
Fujikura, Hajime
Applied Surface Science, 1997, 117-118 : 710 - 713
[34] QUASI-EQUILIBRIUM MODEL OF SMALL-SIGNAL DLTS RESPONSE FROM INSULATOR-SEMICONDUCTOR INTERFACIAL TRAPS IN MIS STRUCTURES
GRENDEL, M
ACTA PHYSICA SLOVACA, 1987, 37 (01) : 28 - 43
[35] A NEW MATHEMATICAL-MODEL FOR SEMICONDUCTOR-ON-INSULATOR STRUCTURES
LAI, PT
SOLID-STATE ELECTRONICS, 1990, 33 (04) : 441 - 444
[36] Performance and detection mechanism of a new class of catalyst (Pd, Pt, or Ag)-adsorptive oxide (SnOx or ZnO)-insulator-semiconductor gas sensors
Kang, W.P., 1600, Elsevier Science S.A., Lausanne, Switzerland (22):
[37] PERFORMANCE AND DETECTION MECHANISM OF A NEW CLASS OF CATALYST (PD, PT, OR AG)-ADSORPTIVE OXIDE (SNOX OR ZNO)-INSULATOR-SEMICONDUCTOR GAS SENSORS
KANG, WP
KIM, CK
SENSORS AND ACTUATORS B-CHEMICAL, 1994, 22 (01) : 47 - 55
[38] Self-consistent model of spin accumulation magnetoresistance in ferromagnet/insulator/semiconductor tunnel junctions
Appelbaum, Ian
Tinkey, Holly N.
Li, Pengke
PHYSICAL REVIEW B, 2014, 90 (22)
[39] Distributed Pinning Spot Model for High-k Insulator - III-V Semiconductor Interfaces
Akazawa, Masamichi
Hasegawa, Hideki
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2009, 7 : 122 - 128
[40] Determination of energy thresholds of electron excitations at semiconductor/insulator interfaces using trap-related displacement currents
Afanas'ev, V. V.
Schubert, J.
Neft, A.
Delie, G.
Shlyakhov, I
Trepalin, V
Houssa, M.
Stesmans, A.
MICROELECTRONIC ENGINEERING, 2019, 215

← 1 2 3 4 5 →