Submonolayer Er phases on Si(111)

被引:0
|
作者
Saranin, Alexander A. [1 ,2 ,3 ]
Zotov, Andrey V. [1 ,2 ,4 ]
Pisarenko, Inna V. [2 ]
Lifshits, Victor G. [2 ]
Katayama, Mitsuhiro [1 ]
Oura, Kenjiro [1 ]
机构
[1] Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
[2] Inst. of Automat./Contr. Processes, 5 Radio Street, Vladivostok 690041, Russia
[3] Faculty of Physics and Engineering, Far Eastern State University, Vladivostok 690000, Russia
[4] Department of Electronics, Vladivostok State Univ. Econ./Serv., Vladivostok 690600, Russia
关键词
Annealing - Deposition - Erbium alloys - Monolayers - Phase measurement - Scanning tunneling microscopy - Surface structure;
D O I
暂无
中图分类号
学科分类号
摘要
Using scanning tunneling microscopy, formation and structure of the submonolayer Er/Si(111) phases have been studied. Depending on the growth conditions, one of two submonolayer phases is formed, 2√3 × 2√3 or √3 × √3. A metastable 2√3 × 2√3 phase develops at the deposition of ∼0.1-0.6 ML of Er onto a Si(111) 7 × 7 surface held at ∼300°C and disappears upon annealing to ∼500°C. The 2√3 × 2√3 phase contains about 0.5 ML of Er and incorporates an incomplete top Si(111) bilayer. A √3 × √3 phase is formed at annealing of ∼0.5-1.0 ML of Er to ∼500-650°C. It exhibits a honeycomb-like structure and accumulates 2/3 ML of Er and a complete top Si(111) bilayer. The possible structures of the 2√3 × 2√3 and √3 × √3 Er/Si(111) submonolayer phases are discussed.
引用
下载
收藏
页码:1110 / 1113
相关论文
共 50 条
  • [41] Instability of the distribution of atomic steps on Si(111) upon submonolayer gold adsorption at high temperatures
    Kosolobov, SS
    Song, SA
    Fedina, LI
    Gutakovskii, AK
    Latyshev, AV
    JETP LETTERS, 2005, 81 (03) : 117 - 121
  • [42] GROWTH OF A 2-DIMENSIONAL ER SILICIDE ON SI(111)
    PAKI, P
    KAFADER, U
    WETZEL, P
    PIRRI, C
    PERUCHETTI, JC
    BOLMONT, D
    GEWINNER, G
    PHYSICAL REVIEW B, 1992, 45 (15): : 8490 - 8493
  • [43] FABRICATION AND STRUCTURE OF EPITAXIAL ER SILICIDE FILMS ON (111) SI
    DAVITAYA, FA
    PERIO, A
    OBERLIN, JC
    CAMPIDELLI, Y
    CHROBOCZEK, JA
    APPLIED PHYSICS LETTERS, 1989, 54 (22) : 2198 - 2200
  • [44] Channeling of low energy heavy ions:: Er in Si⟨111⟩
    Hogg, SM
    Pipeleers, B
    Vantomme, A
    Swart, M
    APPLIED PHYSICS LETTERS, 2002, 80 (23) : 4363 - 4365
  • [45] EPITAXIAL ER SILICIDE FORMATION ON SI(111) IN THE MONOLAYER RANGE
    WETZEL, P
    PIRRI, C
    BOLMONT, D
    GEWINNER, G
    APPLIED SURFACE SCIENCE, 1993, 65-6 : 718 - 724
  • [46] Temperature and angular effects on the channelled implantation of Er into Si⟨111⟩
    Hogg, SM
    Vantomme, A
    Wu, MF
    Pipeleers, B
    Swart, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 : 585 - 589
  • [47] THE RELATIONSHIP BETWEEN THE METASTABLE AND STABLE PHASES OF PB SI(111)
    GREY, F
    FEIDENHANSL, R
    NIELSEN, M
    JOHNSON, RL
    JOURNAL DE PHYSIQUE, 1989, 50 (C7): : C7181 - C7187
  • [48] Devil's staircase in Pb/Si(111) ordered phases
    Hupalo, M
    Schmalian, J
    Tringides, MC
    PHYSICAL REVIEW LETTERS, 2003, 90 (21)
  • [49] Low temperature formation of numerous phases in Pb/Si(111)
    Yeh, V
    Yakes, M
    Hupalo, M
    Tringides, MC
    SURFACE SCIENCE, 2004, 562 (1-3) : L238 - L244
  • [50] Anisotropic electric conductivity of In-Si(111) surface phases
    Lavrinaitis, M. V.
    Tsukanov, D. A.
    Ryzhkov, S. V.
    TECHNICAL PHYSICS LETTERS, 2007, 33 (06) : 459 - 461