Submonolayer Er phases on Si(111)

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作者
Saranin, Alexander A. [1 ,2 ,3 ]
Zotov, Andrey V. [1 ,2 ,4 ]
Pisarenko, Inna V. [2 ]
Lifshits, Victor G. [2 ]
Katayama, Mitsuhiro [1 ]
Oura, Kenjiro [1 ]
机构
[1] Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
[2] Inst. of Automat./Contr. Processes, 5 Radio Street, Vladivostok 690041, Russia
[3] Faculty of Physics and Engineering, Far Eastern State University, Vladivostok 690000, Russia
[4] Department of Electronics, Vladivostok State Univ. Econ./Serv., Vladivostok 690600, Russia
关键词
Annealing - Deposition - Erbium alloys - Monolayers - Phase measurement - Scanning tunneling microscopy - Surface structure;
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摘要
Using scanning tunneling microscopy, formation and structure of the submonolayer Er/Si(111) phases have been studied. Depending on the growth conditions, one of two submonolayer phases is formed, 2√3 × 2√3 or √3 × √3. A metastable 2√3 × 2√3 phase develops at the deposition of ∼0.1-0.6 ML of Er onto a Si(111) 7 × 7 surface held at ∼300°C and disappears upon annealing to ∼500°C. The 2√3 × 2√3 phase contains about 0.5 ML of Er and incorporates an incomplete top Si(111) bilayer. A √3 × √3 phase is formed at annealing of ∼0.5-1.0 ML of Er to ∼500-650°C. It exhibits a honeycomb-like structure and accumulates 2/3 ML of Er and a complete top Si(111) bilayer. The possible structures of the 2√3 × 2√3 and √3 × √3 Er/Si(111) submonolayer phases are discussed.
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页码:1110 / 1113
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