Anisotropic electric conductivity of In-Si(111) surface phases

被引：0
|
作者：
Lavrinaitis, M. V. [1 ]
Tsukanov, D. A. [1 ]
Ryzhkov, S. V. [1 ]
机构：
[1] Russian Acad Sci, Inst Automat & Control Proc, Far E Div, Vladivostok 690022, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2007年 / 33卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/S1063785007060041
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The dependence of the electric conductivity of Si(111) root 3 x root 3 -In and Si(111)4 x 1 -In surface phases on the substrate surface orientation has been studied using low-energy electron diffraction, scanning tunneling microscopy, and four-point probe conductivity measurements. It is established that the directions of maximum conductivity in the Sill 11) root 3 x root 3 -In superlattice coincide with the directions of the maximum number density of In atoms, and in the Sil (111)4 x 1-In superlattice, with the directions of one-dimensional In atomic chains.
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页码：459 / 461
页数：3
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