Anisotropic electric conductivity of In-Si(111) surface phases

The dependence of the electric conductivity of Si(111) root 3 x root 3 -In and Si(111)4 x 1 -In surface phases on the substrate surface orientation has been studied using low-energy electron diffraction, scanning tunneling microscopy, and four-point probe conductivity measurements. It is established that the directions of maximum conductivity in the Sill 11) root 3 x root 3 -In superlattice coincide with the directions of the maximum number density of In atoms, and in the Sil (111)4 x 1-In superlattice, with the directions of one-dimensional In atomic chains.