Anisotropic electric conductivity of In-Si(111) surface phases

被引：0

作者：

Lavrinaitis, M. V. ^{[1
]}

Tsukanov, D. A. ^{[1
]}

Ryzhkov, S. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Automat & Control Proc, Far E Div, Vladivostok 690022, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2007年 / 33卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063785007060041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dependence of the electric conductivity of Si(111) root 3 x root 3 -In and Si(111)4 x 1 -In surface phases on the substrate surface orientation has been studied using low-energy electron diffraction, scanning tunneling microscopy, and four-point probe conductivity measurements. It is established that the directions of maximum conductivity in the Sill 11) root 3 x root 3 -In superlattice coincide with the directions of the maximum number density of In atoms, and in the Sil (111)4 x 1-In superlattice, with the directions of one-dimensional In atomic chains.

引用

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页码：459 / 461

页数：3

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