Negative differential resistance of a delta-doping-induced double-barrier quantum-well diode at room temperature

被引：0

作者：

Wang, R.L. ^{[1
]}

Su, Yan-Kuin ^{[1
]}

Wang, Y.H. ^{[1
]}

Yarn, K.F. ^{[1
]}

机构：

[1] Dept of Electr Eng, Nat Cheng Kung, Univ, Tainan, Taiwan

来源：

Electron device letters | 1990年 / 11卷 / 10期

关键词：

Semiconductor Diodes;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：428 / 430

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