Influence of Ga vs As prelayers on GaAs/Ge growth morphology

被引：0
|
作者：
Univ of Virginia, Charlottesville, United States [1 ]
机构：
来源：
J Electron Mater | / 6卷 / 1009-1013期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
9
引用
收藏
相关论文
共 50 条
  • [41] Growth of GaAs/Ge solar cell by MOVPE
    Tyagi, R
    Pal, R
    Singh, M
    Bal, M
    Haldar, T
    Agarwal, SK
    Maithani, M
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 457 - 459
  • [42] Limits of In(Ga)As/GaAs quantum dot growth
    Lenz, A.
    Eisele, H.
    Timm, R.
    Ivanova, L.
    Sellin, R. L.
    Liu, H. -Y.
    Hopkinson, M.
    Pohl, U. W.
    Bimberg, D.
    Daehne, M.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2009, 246 (04): : 717 - 720
  • [43] Growth of In0.5Ga0.5P on GaAs by LPE: The influence of growth temperature and lattice mismatch on photoluminescence
    Chang, L.B.
    Cheng, K.Y.
    Liu, C.C.
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (07): : 1145 - 1150
  • [44] GROWTH OF IN0.5GA0.5P ON GAAS BY LPE - THE INFLUENCE OF GROWTH TEMPERATURE AND LATTICE MISMATCH ON PHOTOLUMINESCENCE
    CHANG, LB
    CHENG, KY
    LIU, CC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07): : 1145 - 1150
  • [45] Comparison from Simulated Al 0.3 Ga 0.7 As/GaAs/Ge and Al 0.3 Ga 0.7 As/GaAs/Si/Ge to Experimental InGaP/GaAs/InGaNAsSb/Ge for Optimized Utilization of the Solar Spectrum (vol 50, pg 2005, 2021)
    Li, Hongxi
    Tian, Yulin
    Shen, Ling
    Liu, Chusheng
    JOURNAL OF ELECTRONIC MATERIALS, 2022, 51 (01) : 426 - 427
  • [46] Growth of (In,Ga)As/(Al,Ga)As quantum wells on GaAs(110) by MBE
    Hey, R.
    Trampert, A.
    Jahn, U.
    Couto, O. D. D., Jr.
    Santos, P.
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 158 - 162
  • [47] Electrical and structural properties of LT-GaAs: Influence of As/Ga flux ratio and growth temperature
    Luysberg, M
    Sohn, H
    Prasad, A
    Specht, P
    Fujioka, H
    Klockenbrink, R
    Weber, ER
    DEFECTS IN ELECTRONIC MATERIALS II, 1997, 442 : 485 - 490
  • [48] Thickness influence on spinodal decomposition in In0.2Ga0.8As/GaAs low temperature growth
    Herrera, M
    González, D
    González, MU
    González, Y
    González, L
    García, YR
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180): : 213 - 216
  • [49] Influence of UDMHy on GaAs (001) surface reconstruction before and during growth of Ga(NAs) by MOVPE
    Massmeyer, O.
    Sterzer, E.
    Nattermann, L.
    Stolz, W.
    Volz, K.
    APPLIED SURFACE SCIENCE, 2018, 458 : 512 - 516
  • [50] Influence of annealing condition and multicycle AlGaAs/GaAs structures on the Al0.26Ga0.74As surface morphology
    Wei, Wenzhe
    Wang, Yi
    Guo, Xiang
    Luo, Zijiang
    Zhao, Zhen
    Zhou, Haiyue
    Ding, Zhao
    APPLIED SURFACE SCIENCE, 2015, 345 : 400 - 404
12345