Electrical and structural properties of LT-GaAs: Influence of As/Ga flux ratio and growth temperature

被引：0

作者：

Luysberg, M

Sohn, H

Prasad, A

Specht, P

Fujioka, H

Klockenbrink, R

Weber, ER

机构：

来源：

DEFECTS IN ELECTRONIC MATERIALS II | 1997年 / 442卷

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The deposition of GaAs by MBE at low temperatures results in a material of unique properties. However, up to now the control and understanding of the electrical and structural properties are unsatisfactory. To investigate the influence of growth parameters on the formation of point defects and electrical properties, the substrate temperature and the As/Ga flux ratio were systematically varied. In a well defined parameter range the lattice expansion was found to be dominated by the formation of As antisite defects. After annealing a high resistivity is obtained independent of the growth conditions. A strong influence of the growth temperature on the band conduction mechanism is observed, whereas a variation of the As/Ga flux ratio induces only slight changes of the temperature dependence of the conductivity.

引用

页码：485 / 490

页数：6

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