Comprehensive study of structural and optical properties of LT-GaAs epitaxial structures

被引：0
|
作者：
T. M. Burbaev
A. A. Gorbatsevich
V. I. Egorkin
I. P. Kazakov
V. P. Martovitskii
N. N. Mel’nik
Yu. A. Mityagin
V. N. Murzin
S. A. Savinov
S. S. Shmelev
机构：
[1] Russian Academy of Sciences,Lebedev Physical Institute
来源：
Bulletin of the Lebedev Physics Institute | 2013年 / 40卷
关键词：
epitaxial structures; GaAs; structural and optical properties; X-ray diffraction; Raman scattering; photoluminescence;
D O I：
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学科分类号：
摘要：
The results of the comprehensive study of LT-GaAs epitaxial structures on GaAs and Si substrates by high-energy electron diffraction, reflection anisotropy spectroscopy, atomic force microscopy, X-ray diffraction, Raman scattering, and photoluminescence methods are presented. The results obtained indicate the existence of several channels of nonequilibrium carrier recombination, which depend, in particular, on the substrate type and on the complex dependence of the concentration of structural imperfections on the used technology and growth conditions of the structures.
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页码：219 / 224
页数：5
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