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- [2] INFLUENCE OF DEVIATION FROM LT AN BR 001 RT AN BR , LT AN BR 011 RT AN BR AND LT AN BR 111 RT AN BR ORIENTATIONS ON THE VARIATION OF STRAIN RATIO IN DEFORMED NICKEL SINGLE CRYSTALS. Archiwum Hutnictwa, 1987, 32 (02): : 165 - 170
- [3] DAMAGE CREATED BY HIGH-CURRENT-DENSITY IMPLANTS OF PHOSPHORUS INTO LT AN BR 100 RT AN BR AND LT AN BR 111 RT AN BR SILICON WAFERS. Applied physics. A, Solids and surfaces, 1987, A 44 (03): : 213 - 218
- [4] PHOTOCONDUCTIVITY SPECTRA OF n-CdSi:As2 LT AN BR In RT AN BR . Journal of applied spectroscopy, 1985, 42 (05): : 539 - 542
- [5] DISLOCATIONS WITH LT AN BR 100 RT AN BR BURGERS VECTORS IN Ni3Al. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, 1985, 51 (02):
- [6] LANTHANIDE INDUCED CONTACT SHIFTS - NEW VALUES FOR LT AN BR Sz RT AN BR . Journal of the less-common metals, 1986, 126 : 403 - 404
- [7] PLASTIC DEFORMATION OF LT AN BR 111 RT AN BR ORIENTED ALUMINUM SINGLE CRYSTALS. Memoirs of the Faculty of Engineering, Kyoto University, 1985, 47 (pt 2): : 79 - 90
- [10] CHANNELING STUDY ON THE RESIDUAL DEFECTS IN BORON-IMPLATED LT AN BR 100 RT AN BR SILICON. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1985, 6 (01): : 19 - 24