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- [2] INFLUENCE OF DEVIATION FROM LT AN BR 001 RT AN BR , LT AN BR 011 RT AN BR AND LT AN BR 111 RT AN BR ORIENTATIONS ON THE VARIATION OF STRAIN RATIO IN DEFORMED NICKEL SINGLE CRYSTALS. Archiwum Hutnictwa, 1987, 32 (02): : 165 - 170
- [3] THERMODYNAMIC ANALYSIS OF THE CHEMICAL VAPOR DEPOSITION OF COMPOSITE LT AN BR Si3N4 RT AN BR LT AN BR BN RT AN BR COATINGS. Journal of the American Ceramic Society, 1986, 69 (01): : 69 - 74
- [4] DAMAGE CREATED BY HIGH-CURRENT-DENSITY IMPLANTS OF PHOSPHORUS INTO LT AN BR 100 RT AN BR AND LT AN BR 111 RT AN BR SILICON WAFERS. Applied physics. A, Solids and surfaces, 1987, A 44 (03): : 213 - 218
- [5] LANTHANIDE INDUCED CONTACT SHIFTS - NEW VALUES FOR LT AN BR Sz RT AN BR . Journal of the less-common metals, 1986, 126 : 403 - 404
- [7] PLASTIC DEFORMATION OF LT AN BR 111 RT AN BR ORIENTED ALUMINUM SINGLE CRYSTALS. Memoirs of the Faculty of Engineering, Kyoto University, 1985, 47 (pt 2): : 79 - 90
- [8] DISLOCATIONS WITH LT AN BR 100 RT AN BR BURGERS VECTORS IN Ni3Al. Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, 1985, 51 (02):
- [9] CHANNELING STUDY ON THE RESIDUAL DEFECTS IN BORON-IMPLATED LT AN BR 100 RT AN BR SILICON. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1985, 6 (01): : 19 - 24
- [10] HVEM OF THE RECRYSTALLIZATION OF TENSILE DEFORMED LT AN BR 110 RT AN BR -ORIENTED COPPER SINGLE CRYSTALS. Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques, 1980, 71 (05): : 273 - 278