Influence of a compressive strain on the stoichiometry of the (0 0 1)CdTe surface during molecular beam epitaxy

被引：0
|
作者：
Carbonell, L. [1 ]
Mula, Guido [2 ,3 ]
Tatarenko, S. [1 ]
机构：
[1] Lab. de Spectrométrie Phys., CNRS, Univ. Joseph Fourier, BP 87, 38042 Saint Martin d'Hères, France
[2] Dept. Rech. Fond. Sur Matiere Cond., SP2M, CEA Grenoble, 17 R. Martyrs, 38054 Grenoble Cedex 9, France
[3] INFM and Dipartimento di Fisica, Citt. Univ., Strada Prov. Le Per M., 09042 Sestu (CA), Italy
来源：
Journal of Crystal Growth | 1999年 / 203卷 / 01期
关键词：
Molecular beam epitaxy - Reflection high energy electron diffraction - Semiconductor growth - Stoichiometry - Strain - Surface chemistry;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We present here a reflection high-energy electron diffraction study of the (0 0 1)CdTe growing surface during molecular beam epitaxy. The presence of additional weakly bound Te atoms adsorbed on top of the Te dimers terminating the surface during the growth is demonstrated. The coverage of these weakly bound Te atoms is strongly dependent on the growth conditions (temperature and strain). The resulting surface stoichiometry variations have a significant effect on the CdTe growth rate and on the incorporation mechanisms of Cd and Te atoms.
引用
收藏
页码：61 / 66
相关论文
共 50 条
  • [31] Electrical properties of Pb1-xSnxTe layers with 0<=x<=1 grown by molecular beam epitaxy
    Abramof, E
    Ferreira, SO
    Rappl, PHO
    Closs, H
    Bandeira, IN
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) : 2405 - 2410
  • [32] SURFACE STOICHIOMETRY, EPITAXIAL MORPHOLOGY AND STRAIN RELAXATION DURING MOLECULAR-BEAM EPITAXY OF HIGHLY STRAINED INAS/GA0.47IN0.53AS HETEROSTRUCTURES
    TOURNIE, E
    PLOOG, KH
    JOURNAL OF CRYSTAL GROWTH, 1994, 135 (1-2) : 97 - 112
  • [33] Molecular beam spectroscopy of S-1 aniline: Assignments for the 0(0)(0), 6a(0)(1), I-0(2), and 1(0)(1) rovibronic bands
    Kerstel, ERT
    Becucci, M
    Pietraperzia, G
    Consalvo, D
    Castellucci, E
    JOURNAL OF MOLECULAR SPECTROSCOPY, 1996, 177 (01) : 74 - 78
  • [34] CDTE AND HGTE SURFACE GROWTH-KINETICS FOR MOLECULAR AND METALORGANIC MOLECULAR-BEAM EPITAXY
    BENZ, RG
    WAGNER, BK
    CONTE, A
    SUMMERS, CJ
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (08) : 815 - 820
  • [35] Role of strain in dopant surface segregation during Si and SiGe growth by molecular beam epitaxy
    Ni, WX
    Hansson, GV
    Cardenas, J
    Svensson, BG
    THIN SOLID FILMS, 1998, 321 : 131 - 135
  • [36] HG INCORPORATION IN CDTE DURING THE GROWTH OF HGTE-CDTE SUPERLATTICES BY MOLECULAR-BEAM EPITAXY
    RENO, J
    SPORKEN, R
    KIM, YJ
    HSU, C
    FAURIE, JP
    APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1545 - 1547
  • [37] Molecular beam epitaxial growth of zinc-blende FeN(1 1 1) on wurtzite GaN(0 0 0 1)
    Lin, Wenzhi
    Pak, Jeongihm
    Ingram, David C.
    Smith, Arthur R.
    Journal of Alloys and Compounds, 2008, 463 (1-2): : 257 - 262
  • [38] INSITU CALIBRATION OF GROWTH SURFACE-TEMPERATURE FOR MOLECULAR-BEAM EPITAXY OF CDTE
    RAJAVEL, D
    MUELLER, F
    BENSON, JD
    WAGNER, BK
    BENZ, RG
    SUMMERS, CJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 192 - 195
  • [39] Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy
    Appl Phys Lett, 17 (2507):
  • [40] Single crystalline Tm2O3 films grown on Si (0 0 1) by atomic oxygen assisted molecular beam epitaxy
    Ji, T.
    Cui, J.
    Fang, Z. B.
    Nie, T. X.
    Fan, Y. L.
    Li, X. L.
    He, Q.
    Jiang, Z. M.
    JOURNAL OF CRYSTAL GROWTH, 2011, 321 (01) : 171 - 175
12345