INSITU CALIBRATION OF GROWTH SURFACE-TEMPERATURE FOR MOLECULAR-BEAM EPITAXY OF CDTE

被引：4
|
作者：
RAJAVEL, D [1 ]
MUELLER, F [1 ]
BENSON, JD [1 ]
WAGNER, BK [1 ]
BENZ, RG [1 ]
SUMMERS, CJ [1 ]
机构：
[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期
关键词：
D O I：
10.1116/1.584807
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：192 / 195
页数：4
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