Influence of a compressive strain on the stoichiometry of the (0 0 1)CdTe surface during molecular beam epitaxy

被引：0
|
作者：
Carbonell, L. [1 ]
Mula, Guido [2 ,3 ]
Tatarenko, S. [1 ]
机构：
[1] Lab. de Spectrométrie Phys., CNRS, Univ. Joseph Fourier, BP 87, 38042 Saint Martin d'Hères, France
[2] Dept. Rech. Fond. Sur Matiere Cond., SP2M, CEA Grenoble, 17 R. Martyrs, 38054 Grenoble Cedex 9, France
[3] INFM and Dipartimento di Fisica, Citt. Univ., Strada Prov. Le Per M., 09042 Sestu (CA), Italy
来源：
Journal of Crystal Growth | 1999年 / 203卷 / 01期
关键词：
Molecular beam epitaxy - Reflection high energy electron diffraction - Semiconductor growth - Stoichiometry - Strain - Surface chemistry;
D O I：
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中图分类号：
学科分类号：
摘要：
We present here a reflection high-energy electron diffraction study of the (0 0 1)CdTe growing surface during molecular beam epitaxy. The presence of additional weakly bound Te atoms adsorbed on top of the Te dimers terminating the surface during the growth is demonstrated. The coverage of these weakly bound Te atoms is strongly dependent on the growth conditions (temperature and strain). The resulting surface stoichiometry variations have a significant effect on the CdTe growth rate and on the incorporation mechanisms of Cd and Te atoms.
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页码：61 / 66
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