Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density

被引：0

作者：

Remashan, K. ^{[1
]}

Bhat, K.N. ^{[1
]}

机构：

[1] Department of Electrical Engineering, Indian Inst. Technol., M., Chennai, India

来源：

Thin Solid Films | 1999年 / 342卷 / 01期

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页码：20 / 29

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