INFLUENCE OF PREPARATORY SURFACE TREATMENT OF GALLIUM ARSENIDE SUBSTRATES ON PERFECTION OF AUTOEPITAXIAL LAYERS GROWING ON THEM

被引：0
|
作者：
MAGOMEDOV, KA
MAGOMEDO.NN
机构：
来源：
SOVIET PHYSICS CRYSTALLOGRAPHY, USSR | 1967年 / 12卷 / 02期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：286 / +
页数：1
相关论文
共 50 条
  • [1] MAIN REGULARITIES AND ORIGINS OF TRANSITIONAL LAYERS IN AUTOEPITAXIAL GALLIUM ARSENIDE
    LAVRENTEVA, LG
    KATAEV, YG
    VILISOVA, MD
    MOSKOVKIN, VA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1971, (11): : 82 - +
  • [2] MOLECULAR-BEAM ORIENTATION INFLUENCE ON STRUCTURE PERFECTION OF AUTOEPITAXIAL MOLYBDENUM LAYERS
    GERT, LM
    ZHALILOV, RK
    FIZIKA METALLOV I METALLOVEDENIE, 1975, 40 (05): : 1099 - 1102
  • [3] GROWTH OF GALLIUM ANTIMONIDE EPITAXIAL LAYERS ON INDIUM ARSENIDE SUBSTRATES
    PRAMATAROVA, LD
    TRETJAKOV, DN
    CRYSTAL RESEARCH AND TECHNOLOGY, 1981, 16 (09) : 995 - 1000
  • [4] PERFECTION OF EPITAXIAL LAYERS OF GALLIUM-ARSENIDE GROWN IN A TEMPERATURE-GRADIENT FIELD
    GAPONENKO, VN
    LUNIN, LS
    LUNINA, OD
    RATUSHNYI, VI
    INORGANIC MATERIALS, 1985, 21 (11) : 1600 - 1603
  • [5] EXCITATION OF SOUND IN SURFACE LAYERS OF GALLIUM ARSENIDE CRYSTALS
    IVANOV, SN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 30 - &
  • [6] Influence of gallium arsenide surface treatment in selenium vapors on subsurface defects
    N. N. Bezryadin
    G. I. Kotov
    Yu. N. Vlasov
    A. A. Starodubtsev
    P. K. Bhatnagar
    P. C. Mathur
    Russian Physics Journal, 2009, 52 : 411 - 416
  • [7] INFLUENCE OF A METHOD OF TREATMENT OF GALLIUM-ARSENIDE SURFACE ON ITS MICROMORPHOLOGY
    IVONIN, IV
    KRASILNI.LM
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1972, (11): : 137 - &
  • [8] INFLUENCE OF GALLIUM ARSENIDE SURFACE TREATMENT IN SELENIUM VAPORS ON SUBSURFACE DEFECTS
    Bezryadin, N. N.
    Kotov, G. I.
    Vlasov, Yu. N.
    Starodubtsev, A. A.
    Bhatnagar, P. K.
    Mathur, P. C.
    RUSSIAN PHYSICS JOURNAL, 2009, 52 (04) : 411 - 416
  • [9] Determination of crystalline perfection and lattice-mismatch between gallium antimonide epitaxial films and gallium arsenide substrates
    Niranjana, S
    Goswami, N
    Lal, K
    Vogt, A
    Hartnagel, HL
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 341 - 344
  • [10] EPITAXIAL-GROWTH OF GALLIUM-ARSENIDE LAYERS OF GERMANIUM SUBSTRATES
    KAMADJIE.PR
    SOTIROV, SS
    DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1972, 25 (11): : 1499 - 1502
12345