INFLUENCE OF PREPARATORY SURFACE TREATMENT OF GALLIUM ARSENIDE SUBSTRATES ON PERFECTION OF AUTOEPITAXIAL LAYERS GROWING ON THEM

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作者：
MAGOMEDOV, KA
MAGOMEDO.NN
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SOVIET PHYSICS CRYSTALLOGRAPHY, USSR | 1967年 / 12卷 / 02期
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O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
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页码：286 / +
页数：1
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