共 11 条
- [1] OPTIMIZATION OF THE MODE OF GALLIUM-ARSENIDE GROWTH IN CHLORIDE GAS-TRANSPORT SYSTEM PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (24): : 77 - 82
- [3] THE GROWTH-RATE ANISOTROPY AND GROWTH-MECHANISM OF GALLIUM-ARSENIDE IN GAS-TRANSPORT SYSTEMS KRISTALLOGRAFIYA, 1980, 25 (06): : 1273 - 1279
- [4] INFLUENCE OF AN ELECTRIC-FIELD ON THE GROWTH OF GALLIUM-ARSENIDE LAYERS IN THE SYSTEM GAAS-ASCL3-H2 KRISTALLOGRAFIYA, 1979, 24 (02): : 350 - &
- [5] THE INFLUENCE OF AN ELECTRIC-FIELD ON THE GROWTH OF GALLIUM-ARSENIDE LAYERS IN THE GAAS-ASCL3-H2 SYSTEM KRISTALLOGRAFIYA, 1981, 26 (04): : 884 - 887
- [7] ANALYSIS OF THE GAS-PHASE COMPOSITION IN THE SOURCE ZONE BY THE UV ABSORPTION UNDER THE GAAS GROWING IN THE CHLORIDE GAS-TRANSPORT SYSTEM ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (07): : 143 - 150
- [9] INVESTIGATION OF FACTORS, DETERMINING THE THICKNESS HOMOGENEITY OF GALLIUM-ARSENIDE EPITAXIAL LAYERS IN THE GA(CH3)3-ASH3-H2 SYSTEM PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1986, 12 (08): : 506 - 509
- [10] MONTE-CARLO STUDIES OF NONEQUILIBRIUM PHONON EFFECTS IN POLAR SEMICONDUCTORS AND QUANTUM WELLS .2. NON-OHMIC TRANSPORT IN N-TYPE GALLIUM-ARSENIDE PHYSICAL REVIEW B, 1989, 39 (11): : 7866 - 7875