Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density

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作者：
Remashan, K. [1 ]
Bhat, K.N. [1 ]
机构：
[1] Department of Electrical Engineering, Indian Inst. Technol., M., Chennai, India
来源：
Thin Solid Films | 1999年 / 342卷 / 01期
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页码：20 / 29
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