共 50 条
- [42] Dissociative adsorption of Si2H6 on the Si(001) surface PHYSICAL REVIEW B, 2000, 61 (15): : 10216 - 10222
- [44] Static-exchange cross sections for electron-collisions with B2H6, C2H6, Si2H6, and Ge2H6 EUROPEAN PHYSICAL JOURNAL D, 1998, 1 (03): : 291 - 296
- [47] Saturation adsorption reaction of cracked Si2H6 on Si(001) and Ge(001) Applied Surface Science, 1998, 130-132 : 304 - 309
- [48] A comparison of MOS devices with in-situ boron doped polysilicon and poly SiGe gates deposited in an RTCVD system using Si2H6 and B2H6 gas mixture RAPID THERMAL AND INTEGRATED PROCESSING VII, 1998, 525 : 207 - 212