B-doped Si(001)2 × 1 gas-source molecular-beam epitaxy from Si2H6 and B2H6

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Univ of Illinois, Urbana, United States ^{[1
]}

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Vacuum | / 8-10卷 / 913-916期

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Number:; DEAC0276ER01198; Acronym:; -; Sponsor:; N00014-Sl-K-0568; ONR; Sponsor: Office of Naval Research; SRC; Sponsor: Semiconductor Research Corporation;

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[21] Effect of Ge on the P doping in Si gas-source molecular beam epitaxy using Si2H6 and PH3
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