B-doped Si(001)2 × 1 gas-source molecular-beam epitaxy from Si2H6 and B2H6

被引:0
|
作者
Univ of Illinois, Urbana, United States [1 ]
机构
来源
Vacuum | / 8-10卷 / 913-916期
关键词
Number:; DEAC0276ER01198; Acronym:; -; Sponsor:; N00014-Sl-K-0568; ONR; Sponsor: Office of Naval Research; SRC; Sponsor: Semiconductor Research Corporation;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Ge(001) gas-source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: growth kinetics and surface roughening
    Bramblett, T.R.
    Lu, Q.
    Lee, N.-E.
    Taylor, N.
    Hasan, M.-A.
    Greene, J.E.
    Journal of Applied Physics, 1995, 77 (04):
  • [32] CHARACTERISTICS OF B-DOPED SI1-XGEX GROWTH-RATES BY CHEMICAL-VAPOR-DEPOSITION USING SI2H6, GEH4, AND B2H6 GASES
    FUJINAGA, K
    KARASAWA, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (07) : 2081 - 2084
  • [33] IN-SITU OBSERVATION OF SILICON HYDRIDES AN SI(100) SURFACES DURING SYNCHROTRON-RADIATION-STIMULATED SI2H6 GAS-SOURCE MOLECULAR-BEAM EPITAXY
    YOSHIGOE, A
    MASE, K
    TSUSAKA, Y
    URISU, T
    KOBAYASHI, Y
    OGINO, T
    APPLIED PHYSICS LETTERS, 1995, 67 (16) : 2364 - 2366
  • [35] THE GROWTH-PROPERTIES OF SIGE FILMS ON SI(100) USING SI2H6 GAS AND GE SOLID SOURCE MOLECULAR-BEAM EPITAXY
    WADO, H
    SHIMIZU, T
    ISHIDA, M
    NAKAMURA, T
    JOURNAL OF CRYSTAL GROWTH, 1995, 147 (3-4) : 320 - 325
  • [36] Desorption rate of surface hydrogen in SiGe gas-source molecular beam epitaxy using Si2H6 and GeH4
    Hirose, F
    Sakamoto, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (05): : 2974 - 2978
  • [37] Reaction mechanisms of B2H6, Si2H6,PH3 and H2Se with CuO
    Watanabe, T
    Suzuki, T
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 1997, 105 (09) : 779 - 783
  • [38] Thermal stability of B-doped SiGe layers formed on Si substrates by Si-GeH4-B2H6 molecular beam epitaxy
    Karasawa, Takeshi
    Kunii, Yasuo
    Tabe, Michiharu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (3 A): : 1039 - 1044
  • [39] MOLECULAR-BEAM STUDIES OF THE REACTION OF SI2H6 ON SILICON SURFACES
    XIA, LQ
    FURJANIC, MJ
    HANSEN, DA
    ENGSTROM, JR
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1993, 205 : 30 - COLL
  • [40] GE(001) GAS-SOURCE MOLECULAR-BEAM EPITAXY ON GE(001)2X1 AND SI(001)2X1 FROM GE2H6 - GROWTH-KINETICS AND SURFACE ROUGHENING
    BRAMBLETT, TR
    LU, Q
    LEE, NE
    TAYLOR, N
    HASAN, MA
    GREENE, JE
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (04) : 1504 - 1513