RADIATION EFFECTS IN MOS CAPACITORS WITH VERY THIN OXIDES AT 80 degree K.

被引：0

作者：

Saks, N.S. ^{[1
]}

Ancona, M.G. ^{[1
]}

Modolo, J.A. ^{[1
]}

机构：

[1] US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA

来源：

IEEE Transactions on Nuclear Science | 1984年 / NS-31卷 / 06期

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摘要：

引用

页码：1249 / 1255

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