RADIATION EFFECTS IN MOS CAPACITORS WITH VERY THIN OXIDES AT 80 degree K.

被引：0
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作者：
Saks, N.S. [1 ]
Ancona, M.G. [1 ]
Modolo, J.A. [1 ]
机构：
[1] US Naval Research Lab, Washington,, DC, USA, US Naval Research Lab, Washington, DC, USA
来源：
IEEE Transactions on Nuclear Science | 1984年 / NS-31卷 / 06期
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摘要：
17
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页码：1249 / 1255
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