DEPENDENCE OF RADIATION-INDUCED DAMAGE ON GATE OXIDE THICKNESS IN MOS CAPACITORS WITH ULTRATHIN GATE OXIDES

被引：8
|
作者：
JOSHI, AB
KWONG, DL
机构：
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 08期
关键词：
RADIATION EFFECTS; METAL OXIDE SEMICONDUCTOR STRUCTURES AND DEVICES; CAPACITORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19920471
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of scaling down gate oxide thickness on radiation induced damage in MOS capacitors with sub-10 nm gate oxides is reported. The trend of reduction in radiation induced positive charge and interface state generation is observed to continue for these ultrathin gate oxides. Results show that neutral trap generation due to radiation exposure is negligible in sub-10 nm gate oxides.
引用
收藏
页码：744 / 746
页数：3
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