DEPENDENCE OF RADIATION-INDUCED DAMAGE ON GATE OXIDE THICKNESS IN MOS CAPACITORS WITH ULTRATHIN GATE OXIDES

被引：8
|
作者：
JOSHI, AB
KWONG, DL
机构：
[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas, Austin
来源：
ELECTRONICS LETTERS | 1992年 / 28卷 / 08期
关键词：
RADIATION EFFECTS; METAL OXIDE SEMICONDUCTOR STRUCTURES AND DEVICES; CAPACITORS; SEMICONDUCTOR DEVICES AND MATERIALS;
D O I：
10.1049/el:19920471
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of scaling down gate oxide thickness on radiation induced damage in MOS capacitors with sub-10 nm gate oxides is reported. The trend of reduction in radiation induced positive charge and interface state generation is observed to continue for these ultrathin gate oxides. Results show that neutral trap generation due to radiation exposure is negligible in sub-10 nm gate oxides.
引用
收藏
页码：744 / 746
页数：3
相关论文
共 50 条
  • [21] Characterization of plasma charging damage in ultrathin gate oxides
    Lin, HC
    Wang, MF
    Chen, CC
    Hsien, SK
    Chien, CH
    Huang, TY
    Chang, CY
    Chao, TS
    1998 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 36TH ANNUAL, 1998, : 312 - 317
  • [22] Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations
    R. Hölzl
    A. Huber
    L. Fabry
    K.-J. Range
    M. Blietz
    Applied Physics A, 2001, 72 : 351 - 356
  • [23] Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations
    Hölzl, R
    Huber, A
    Fabry, L
    Range, KJ
    Blietz, M
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2001, 72 (03): : 351 - 356
  • [24] Integrity of ultrathin gate oxides with different oxide thickness, substrate wafers and metallic contaminations
    Holzl, R.
    Huber, A.
    Fabry, L.
    Range, K.-J.
    Blietz, M.
    Applied Physics A: Materials Science and Processing, 2001, 72 (03): : 351 - 356
  • [25] Effect of growth conditions on the reliability of ultrathin MOS gate oxides
    Yang, TC
    Saraswat, KC
    MATERIALS RELIABILITY IN MICROELECTRONICS VI, 1996, 428 : 355 - 360
  • [26] Evaluation of plasma charging damage in ultrathin gate oxides
    Lin, HC
    Chen, CC
    Chien, CH
    Hsein, SK
    Wang, MF
    Chao, TS
    Huang, TY
    Chang, CY
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (03) : 68 - 70
  • [27] Germanium MOS capacitors incorporating ultrathin high-κ gate dielectric
    Chui, CO
    Ramanathan, S
    Triplett, BB
    McIntyre, PC
    Saraswat, KC
    IEEE ELECTRON DEVICE LETTERS, 2002, 23 (08) : 473 - 475
  • [28] Gate current in ultrathin MOS capacitors: A new model of tunnel current
    Larcher, L
    Paccagnella, A
    Ghidini, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (02) : 271 - 278
  • [29] Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides
    Pompl, T.
    Kerber, A.
    Roehner, M.
    Kerber, M.
    MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1603 - 1607
  • [30] Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses
    Deki, Manato
    Makino, T.
    Kojima, K.
    Tomita, T.
    Ohshima, T.
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 440 - +
12345