Effects of the two-step growth method for GaAs grown on CaF2/Si(111) with the electron beam surface modification technique

被引：0
|
作者：
Tokyo Inst of Technology, Yokohama, Japan [1 ]
机构：
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 3 A卷 / 1521-1525期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] ELECTRON-BEAM EXPOSURE (EBE) AND EPITAXY OF GAAS FILMS ON CAF2/SI STRUCTURES
    LEE, HC
    ASANO, T
    ISHIWARA, H
    FURUKAWA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (09): : 1616 - 1625
  • [32] Electron-beam exposure (EBE) and epitaxy of GaAs films on CaF2/Si structures
    Lee, Hee Chul
    Asano, Tanemasa
    Ishiwara, Hiroshi
    Furukawa, Seijiro
    1616, (27):
  • [33] SURFACE MODIFICATION OF CAF2 IN ATOMIC LAYER SCALE BY ELECTRON-BEAM EXPOSURE
    HWANG, SM
    IZUMI, A
    TSUTSUI, K
    FURUKAWA, S
    APPLIED SURFACE SCIENCE, 1994, 82-3 (1-4) : 523 - 527
  • [34] Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces
    Kim, BM
    Ventrice, CA
    Mercer, T
    Overney, R
    Schowalter, LJ
    APPLIED SURFACE SCIENCE, 1996, 104 : 409 - 416
  • [35] Ballistic electron emission microscopy measurements of epitaxially grown Pt/CaF2/Si(111) structures
    LaBella, VP
    Ventrice, CA
    Schowalter, LJ
    APPLIED SURFACE SCIENCE, 1998, 123 : 213 - 218
  • [36] Heteroepitaxial growth of CdF2 layers on CaF2/Si(111) by molecular beam epitaxy
    Izumi, Akira
    Tsutsui, Kazuo
    Sokolov, Nikolai S.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (01): : 295 - 296
  • [37] Heteroepitaxial growth of CdF2 layers on CaF2/Si(111) by molecular beam epitaxy
    Izumi, A
    Tsutsui, K
    Sokolov, NS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (01): : 295 - 296
  • [38] Annealing effects on nanoscratch behavior of CaF2 thin films growth on Si(111)
    Lepienski, CM
    Mattoso, N
    Mosca, DH
    Schreiner, WH
    Mazzaro, I
    Teixeira, SR
    Macedo, WAA
    Martins, MD
    FUNDAMENTALS OF NANOINDENTATION AND NANOTRIBOLOGY, 1998, 522 : 457 - 462
  • [39] SURFACE-MORPHOLOGY OF EPITAXIAL CAF2/SI(111) AND ITS INFLUENCE ON SUBSEQUENT GAAS EPITAXY
    LI, WD
    THUNDAT, T
    ANAN, T
    SCHOWALTER, LJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 670 - 673
  • [40] The effect of substrate misorientation on the evolution of surface morphology in epitaxially grown CaF2/Si(111) heterostructures
    Kim, BM
    Soss, SR
    Overney, RM
    Schowalter, LJ
    EVOLUTION OF EPITAXIAL STRUCTURE AND MORPHOLOGY, 1996, 399 : 177 - 182
12345