Effects of the two-step growth method for GaAs grown on CaF2/Si(111) with the electron beam surface modification technique

被引：0
|
作者：
Tokyo Inst of Technology, Yokohama, Japan [1 ]
机构：
来源：
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 3 A卷 / 1521-1525期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] ELECTRONIC-STRUCTURE OF MOLECULAR-BEAM EPITAXY GROWN CAF2 ON SI(111)
    KARLSSON, UO
    HIMPSEL, FJ
    MORAR, JF
    RIEGER, D
    YARMOFF, JA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 1117 - 1120
  • [22] Surface segregation of CaF2 in thin Si(111)/CaF2/Si multilayers studied by total electron yield spectroscopy and in situ ellipsometry
    Ejima, T
    Ohuchi, K
    Watanabe, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (7A): : 5171 - 5177
  • [23] Epitaxial growth and electrical characteristics of CaF2/Si/CaF2 resonant tunneling diode structures grown on Si(111) 1°-off substrate
    Watanabe, M
    Iketani, Y
    Asada, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (10A): : L964 - L967
  • [24] SURFACE-MORPHOLOGY OF SILICON GROWN ON CAF2/SI BY ELECTRON-BEAM-ASSISTED MOLECULAR-BEAM EPITAXY
    PETTERSSON, PO
    MILES, RJ
    MCGILL, TC
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (11) : 7328 - 7331
  • [25] Study of thin ZnSe buffer layers for growth of GaAs on CaF2/Si(111) heterostructures
    Sarinanto, MM
    Yamaguchi, Y
    Tsutsui, K
    THIN SOLID FILMS, 1998, 334 (1-2) : 15 - 19
  • [26] ON THE MODE OF GROWTH OF CAF2 AND (CA,SR)F2 ON GAAS AND SI(111) SUBSTRATES
    FONTAINE, C
    CASTAGNE, J
    BEDEL, E
    MUNOZYAGUE, A
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 2076 - 2078
  • [27] Heteroepitaxy of GaAs on a modified CaF2 surface by an extremely low energy electron beam
    Hwang, SM
    Miyasato, K
    Tsutsui, K
    MATERIALS CHEMISTRY AND PHYSICS, 1996, 45 (03) : 216 - 219
  • [28] Investigation of the surface properties of CaF2 layers on (111) Si as a function of growth temperature
    Suela, J.
    Abramof, E.
    Rappl, P. H. O.
    Freitas, F. E.
    Closs, H.
    Boschetti, C.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 44 (18)
  • [29] InxGa1-xAs islands grown on CaF2/Si(111) by molecular beam epitaxy
    Takeda, Y
    Moriya, Y
    Sadayoshi, Y
    Nonogaki, Y
    SECOND INTERNATIONAL CONFERENCE ON PROCESSING MATERIALS FOR PROPERTIES, 2000, : 325 - 328
  • [30] DISTRIBUTION OF INTERFACIAL AS ATOMS IN THE ELECTRON-BEAM EXPOSURE AND EPITAXY (EBE-EPITAXY) TECHNIQUE FOR GROWING GAAS FILMS ON CAF2/SI(111) STRUCTURES
    LEE, HC
    ISHIWARA, H
    FURUKAWA, S
    SAIKI, K
    KOMA, A
    APPLIED SURFACE SCIENCE, 1989, 41-2 : 553 - 558
12345