Raman scattering characterization of strain in GaAs heteroepitaxial films grown on sapphire and silicon-on-sapphire substrates

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[1] Humphreys, T.P.
[2] Posthill, J.B.
[3] Das, K.
[4] Sukow, C.A.
[5] Nemanich, R.J.
[6] Parikh, N.R.
[7] Majeed, A.
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Humphreys, T.P. | 1600年 / 28期
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Semiconducting Gallium Arsenide;
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