STUDY OF LOCALIZED EXCITONS IN INDIRECT GAP GaAs1 - xPx.

被引：0

作者：

Lai, Shui T. ^{[1
]}

Klein, M.V. ^{[1
]}

机构：

[1] Allied Corp, Morristown, NJ, USA, Allied Corp, Morristown, NJ, USA

来源：

| 1600年 / 31-32期

关键词：

GALLIUM ARSENIDE PHOSPHIDE - LOCALIZED EXCITONS;

D O I：

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学科分类号：

摘要：

引用

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[1] MOLECULAR BEAM EPITAXY OF GaP AND GaAs1 - xPx.
Matsushima, Yuichi
Gonda, Shun-ichi
1600, (15):
[2] STUDY OF LOCALIZED EXCITONS IN INDIRECT GAP GAAS1-XPX
LAI, ST
KLEIN, MV
JOURNAL OF LUMINESCENCE, 1984, 31-2 (DEC) : 482 - 484
[3] THEORETICAL STUDY ON THE NITROGEN ISOELECTRONIC TRAP IN GaAs1 - xPx.
Li Hanqiu
Lu Fen
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (02): : 187 - 190
[4] PHOTOLUMINESCENCE STUDY OF EXCITONS LOCALIZED IN INDIRECT-GAP GAAS1-XPX
LAI, ST
KLEIN, MV
PHYSICAL REVIEW B, 1984, 29 (06): : 3217 - 3224
[5] USE OF TERTIARYBUTYLPHOSPHINE FOR THE GROWTH OF InP AND GaAs1 - xPx.
Chen, C.H.
Cao, D.S.
Stringfellow, G.B.
Journal of Electronic Materials, 1988, 17 (01): : 67 - 73
[6] PROPERTIES OF EL2 IN GaAs AND GaAs1 - xPx.
Samuelson, L.
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1984, 127 B-C (1-3): : 104 - 111
[7] STUDY OF LOCALIZED EXCITONS IN INDIRECT-GAP GAAS1-XPX BY RESONANT EXCITATION
LAI, ST
KLEIN, MV
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1983, 73 (10) : 1385 - 1385
[8] UNIAXIAL STRESS AND TEMPERATURE DEPENDENCES OF PHOTOLUMINESCENCE IN GaAs1 -xPx.
Narita, Shin-ichiro
Kubota, Takeshi
Kobayashi, Michihiro
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1983, 22 (03): : 467 - 474
[9] Phototransmittance involving bound excitons in GaP(N) and GaAs1−xPx(N).
A. N. Ivkin
A. N. Pikhtin
Technical Physics Letters, 1998, 24 : 419 - 420
[10] Optical orientation of excitons on GaAs1-xPx alloys with indirect gap
Charfi, FF
ANNALES DE PHYSIQUE, 1995, 20 (03) : 85 - 90

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