UNIAXIAL STRESS AND TEMPERATURE DEPENDENCES OF PHOTOLUMINESCENCE IN GaAs1 -xPx.

被引：0
|
作者：
Narita, Shin-ichiro
Kubota, Takeshi
Kobayashi, Michihiro
机构：
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1983年 / 22卷 / 03期
关键词：
D O I：
10.1143/jjap.22.467
中图分类号：
学科分类号：
摘要：
22
引用
收藏
页码：467 / 474
相关论文
共 50 条
  • [1] MOLECULAR BEAM EPITAXY OF GaP AND GaAs1 - xPx.
    Matsushima, Yuichi
    Gonda, Shun-ichi
    1600, (15):
  • [2] USE OF TERTIARYBUTYLPHOSPHINE FOR THE GROWTH OF InP AND GaAs1 - xPx.
    Chen, C.H.
    Cao, D.S.
    Stringfellow, G.B.
    Journal of Electronic Materials, 1988, 17 (01): : 67 - 73
  • [3] PROPERTIES OF EL2 IN GaAs AND GaAs1 - xPx.
    Samuelson, L.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1984, 127 B-C (1-3): : 104 - 111
  • [4] STUDY OF LOCALIZED EXCITONS IN INDIRECT GAP GaAs1 - xPx.
    Lai, Shui T.
    Klein, M.V.
    1600, (31-32):
  • [5] THEORETICAL STUDY ON THE NITROGEN ISOELECTRONIC TRAP IN GaAs1 - xPx.
    Li Hanqiu
    Lu Fen
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1983, 4 (02): : 187 - 190
  • [6] UNIAXIAL-STRESS AND TEMPERATURE DEPENDENCES OF PHOTO-LUMINESCENCE IN GAAS1-XPX
    NARITA, S
    KUBOTA, T
    KOBAYASHI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (03): : 467 - 474
  • [7] RECOMBINATION-ENHANCED ANNEALING OF GAMMA-RAY INDUCED DEFECTS IN GaAS1 -xPx.
    Shirafuji, Junji
    Kakiuchi, Takao
    Oka, Koji
    Inuishi, Yoshio
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1983, 22 (09): : 1368 - 1373
  • [8] COMPOSITION AND TEMPERATURE DEPENDENCES OF THE QUANTUM EFFICIENCY OF THE PHOTOLUMINESCENCE EMITTED BY GaAs1 - xSbx SOLIDS SOLUTIONS.
    Biryulin, Yu.F.
    Ichkitidze, R.R.
    Chaldyshev, V.V.
    Shmartsev, Yu.V.
    1600, (18):
  • [9] EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF BOND LENGTHS IN GaAs1 - xPx.
    Sasaki Toru
    Onda, Tomohiro
    Ito, Ryoichi
    Ogasawara, Nagaatsu
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (02): : 231 - 233
  • [10] GaAs1—xPx晶体生长
    发光学报, 1973, (01) : 24 - 28
12345