共 50 条
- [21] Photoluminescence investigation on highly p+-doped GaAs1−ySby (y<0.3) Science China Technological Sciences, 2012, 55 : 3200 - 3203
- [24] Photoluminescence of heavily p-type-doped GaAs: temperature and concentration dependences Chen, Horng Dar, 1920, JJAP, Minato-ku, Japan (33):
- [25] PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4A): : 1920 - 1927
- [27] Time-resolved photoluminescence in nitrogen-doped GaAs1-xPx Journal of Physics Condensed Matter, 1994, 6 (47): : 10377 - 10390
- [28] COMPOSITION AND TEMPERATURE DEPENDENCES OF THE QUANTUM EFFICIENCY OF THE PHOTOLUMINESCENCE EMITTED BY GAAS1-XSBX SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (07): : 780 - 783
- [30] PHOTOLUMINESCENCE STUDY OF EXCITONS LOCALIZED IN INDIRECT-GAP GAAS1-XPX PHYSICAL REVIEW B, 1984, 29 (06): : 3217 - 3224