STUDY OF LOCALIZED EXCITONS IN INDIRECT GAP GAAS1-XPX

被引：1

|

作者：

LAI, ST ^{[1
]}

KLEIN, MV ^{[1
]}

机构：

[1] UNIV ILLINOIS,URBANA,IL 61801

来源：

JOURNAL OF LUMINESCENCE | 1984年 / 31-2卷 / DEC期

关键词：

D O I：

10.1016/0022-2313(84)90334-X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

收藏

页码：482 / 484

页数：3

相关论文

共 50 条

[1] PHOTOLUMINESCENCE STUDY OF EXCITONS LOCALIZED IN INDIRECT-GAP GAAS1-XPX
LAI, ST
KLEIN, MV
PHYSICAL REVIEW B, 1984, 29 (06): : 3217 - 3224
[2] STUDY OF LOCALIZED EXCITONS IN INDIRECT-GAP GAAS1-XPX BY RESONANT EXCITATION
LAI, ST
KLEIN, MV
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1983, 73 (10) : 1385 - 1385
[3] Optical orientation of excitons on GaAs1-xPx alloys with indirect gap
Charfi, FF
ANNALES DE PHYSIQUE, 1995, 20 (03) : 85 - 90
[4] STUDY OF LOCALIZED EXCITONS IN INDIRECT GAP GaAs1 - xPx.
Lai, Shui T.
Klein, M.V.
1600, (31-32):
[5] Phototransmittance involving bound excitons in GaP(N) and GaAs1-xPx(N)
Ivkin, AN
Pikhtin, AN
TECHNICAL PHYSICS LETTERS, 1998, 24 (06) : 419 - 420
[6] GROWTH AND CHARACTERIZATION OF GAP AND GAAS1-XPX
KUIJPERS, EPJ
BLOK, L
VINK, AT
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 165 - 171
[7] EVIDENCE FOR EXCITON LOCALIZATION BY ALLOY FLUCTUATIONS IN INDIRECT-GAP GAAS1-XPX
LAI, S
KLEIN, MV
PHYSICAL REVIEW LETTERS, 1980, 44 (16) : 1087 - 1090
[8] LUMINESCENCE DECAYS OF N-BOUND EXCITONS IN GAAS1-XPX
KASH, JA
COLLET, JH
WOLFORD, DJ
THOMPSON, J
PHYSICAL REVIEW B, 1983, 27 (04) : 2294 - 2300
[9] INDIRECT, GAMMA-8NU-X-1C, BAND GAP IN GAAS1-XPX
ONTON, A
FOSTER, LM
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) : 5084 - 5090
[10] DISLOCATIONS IN GAAS1-XPX
STRINGFELLOW, GB
GREENE, PE
JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) : 502 - +

← 1 2 3 4 5 →