STUDY OF LOCALIZED EXCITONS IN INDIRECT GAP GaAs1 - xPx.

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作者：
Lai, Shui T. [1 ]
Klein, M.V. [1 ]
机构：
[1] Allied Corp, Morristown, NJ, USA, Allied Corp, Morristown, NJ, USA
来源：
| 1600年 / 31-32期
关键词：
GALLIUM ARSENIDE PHOSPHIDE - LOCALIZED EXCITONS;
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